| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685142 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 5 Pages |
Abstract
Thin films of Fe3O4 have been deposited on single crystal MgO(1Â 0Â 0) and Si(1Â 0Â 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly ã1Â 1Â 1ã oriented. Film thicknesses are 150Â nm. These films have been irradiated with 200Â MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5Â ÃÂ 1010Â ions/cm2 to 1Â ÃÂ 1012Â ions/cm2. We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but ã1Â 1Â 1ã oriented film. The pristine film on Si substrate shows Verwey transition (TV) close to 125Â K, which is higher than generally observed in single crystals (121Â K). After the irradiation with the 5Â ÃÂ 1010Â ions/cm2 fluence value, TV shifts to 122Â K, closer to the single crystal value. However, with the higher fluence (1Â ÃÂ 1012Â ions/cm2) irradiation, TV again shifts to 125Â K.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Ram Prakash, R.J. Choudhary, Shailja Tiwari, D.M. Phase, Ravi Kumar,