| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685144 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 5 Pages |
Abstract
Germanium atomic (Ge1) and molecular ions (Ge2) of equivalent energy are implanted in silicon at an elevated temperature. The ion induced damage has been characterized by RBS channeling (RBS/C) and positron annihilation spectroscopy. The RBS/C studies indicate that the molecular ion implantation has produced more defects in the near surface regions compared to the atomic ion implantation. This paper reports a first time observation of an enhanced production of vacancy related defects in silicon implanted with molecular ions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
C. David, S. Abhaya, B. Sundaravel, K.G.M. Nair, B.K. Panigrahi, G. Amarendra,