| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685184 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 5 Pages |
Abstract
N profiles of several GaAs1âxNx epitaxial layers with different N mole fractions in the range 0 < x < 0.14 were obtained by using (1) heavy-ion elastic recoil detection analysis (HI-ERDA) along with Rutherford backscattering spectrometry (RBS) using a 35 MeV Si6+ beam, and (2) nuclear reaction analysis (NRA) with the 14N(α, p)17O reaction, also with RBS, using a 3.7 MeV 4He+ beam. The results from the two techniques are compared and the advantages, disadvantages and capabilities are discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
R.W. Smith, J. Plaza, D. Ghita, M. Sánchez, B.J. GarcÃa, A. Muñoz-MartÃn, A. Climent-Font,