| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685201 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
Thin films of zinc oxide (ZnO), having different thicknesses were prepared by pulsed laser deposition (PLD) technique onto silicon Si(1 1 1) and quartz (SiO2) substrates at different partial pressures of oxygen. Rutherford back scattering (RBS) analysis was carried out in order to investigate effect of deposition parameters on thickness of films. Quality of the films was investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses. The thickness of the film was found to increase with oxygen partial pressure for both Si and SiO2 substrates.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Shuchi Tripathi, R.J. Choudhary, A. Tripathi, V. Baranwa, A.C. Pandey, J.W. Gerlach, C. Dar, D. Kanjilal,