Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1685221 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 4 Pages |
Abstract
High performance optoelectronic devices require monolithic integration of different functions at chip level. This is the case of multi-quantum well (MQW) electroabsorption modulated laser (EML), employed in long-distance, high-frequency optical fiber communication applications, which is realized exploiting the selective area growth (SAG) technique. Optimization of the growth parameters is carried out by empirical approaches since a direct characterization of the MQW is not possible with laboratory X-ray sources, owing to the micrometer-variation of composition and thickness inherent to the SAG technique. In this work we combined micrometer-resolved photoluminescence with synchrotron radiation micrometer-resolved X-ray fluorescence to study the effect of different SAG masks on the electronic properties and chemical composition of the SAG MQW EML device.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Lorenzo Mino, Angelo Agostino, Simone Codato, Gema Martinez-Criado, Carlo Lamberti,