| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685293 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 4 Pages |
Abstract
The redistribution of implanted 30Si atoms in isotopically purified 28SiO2 thermal oxide is studied as functions of temperature and implanted dose. The results clearly evidence a diffusion enhancement, which is more pronounced at low temperature and high dose. The results are consistent with the simple picture that the redistribution is governed by a Si interstitial diffusion mechanism, which can be slowed down by the presence of residual impurities.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Daniel Mathiot, Michele Perego, Marco Fanciulli, Gérard Ben Assayag,