| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685312 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 5 Pages |
Abstract
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 × 1010 cm−2 to 1 × 1013 cm−2. Their performance degradation is analyzed using current–voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.
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Authors
Wang Rong, Liu Yunhong, Sun Xufang,