| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685329 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1×1013cm-2, a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5D0→7F25D0→7F2 transition in Eu3+Eu3+ kept the initial PL intensity after the proton irradiation up to 1×1014cm-2. Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment.
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Authors
Hiroshi Okada, Yasuo Nakanishi, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima,