| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685400 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
Damage effects in GaAs/Ge solar cells irradiated by <200Â keV protons were studied by measuring their electrical properties and spectral response together with SRIM simulations. Proton energies of 40, 70 and 170Â keV were chosen. Experimental results show that the short circuit current, open circuit voltage and maximum power decrease with increasing proton fluence. The degradation of the open circuit voltage is highest for 70Â keV irradiation and lowest for 40Â keV irradiation. The degradation of short circuit current decreases with increasing proton energy. According to SRIM simulations and spectral response analysis, the above changes in electrical properties are mainly related to damage in different regions of the solar cells.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hu Jian-Min, Wu Yi-Yong, Zhang Zhongwei, Yang De-Zhuang, He Shi-Yu,