| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685514 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2011 | 5 Pages |
Abstract
We study the influence of ion irradiation on magnetic, magneto-transport and structural properties in Ga0.94Mn0.06As films. The carrier concentration is accurately controlled by defects introduced via ion irradiation. Magnetic properties strongly depend on the hole concentration. We present the modification of coercivity, magnetic anisotropy, and magnetotransport properties during such a procedure. By X-ray diffraction and Raman spectra, we exclude the effects from structural changes. Using lithograph made resist mask, one can realize planar local structures with different magnetic properties, indicating the promising future of ion irradiation for spintronics device fabrication.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Lin Li, S.D. Yao, O. Roshchupkina, S. Prucnal, S. Akhmadaliev, R.P. Campion, A.W. Rushforth, J. Fassbender, M. Helm, B.L. Gallagher, C. Timm, H. Schmidt, Shengqiang Zhou,