Article ID Journal Published Year Pages File Type
1685544 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2008 6 Pages PDF
Abstract

Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions (energy E = 350 MeV, fluences of 107 cm−2 and 108 cm−2) and silicon diodes irradiated with electrons (energy E = 3.5 MeV, fluences of 1015 cm−2, 5 × 1015 cm−2 and 1016 cm−2) have been investigated. Frequency dependences of the impedance, current–voltage characteristics and switching characteristics of these devices have been studied. Irradiation of the diodes with 197Au+26 ions at a fluence of 108 cm−2 leads to the formation of a quasi-continuous layer of irradiation-induced defects that enable a combination of characteristics such as a reverse resistance recovery time and direct voltage drop that are better than those for electron-irradiated diodes. Still, the irradiation of high-energy ions results in an increase in recombination currents that are larger than those obtained with electron irradiation, and causes more complicated frequency dispersion of the diode parameters.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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