Characteristics of the electron-emission defects introduced in Si–SiO2 structures by MeV electron irradiation

Defects induced by high-energy electrons in Si–SiO2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si–SiO2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created by electron irradiation at the interface and in the oxide bulk are vacancies like E′-centers. Most of the photoemission activity changes are observed during low doses electron irradiation. Some uncharged defects like diamagnetic oxygen-deficient centers are also observed, together with E′-centers.