Article ID Journal Published Year Pages File Type
1685897 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2008 4 Pages PDF
Abstract

NiO thin films grown on Si(1 0 0) substrate by electron beam evaporation and sintered at 500 and 700 °C were irradiated with 120 MeV Au9+ ions. The FCC structure of the sintered films was retained up to the highest fluence (3 × 1013 ions cm−2) of irradiation. In the low fluence (⩽1 × 1013 ions cm−2) regime however, the evolution of the XRD pattern with fluence showed a wide variation, critically depending upon their initial microstructure. Though irradiation is known to induce disorder in the structure, we observe improvement in crystallization and texturing at intermediate fluences of irradiation.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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