| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1685946 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 6 Pages |
Abstract
The key effects of combined transient neutron and ionizing radiation on silicon diodes and bipolar junctions transistors are described. The results show that interstitial defect reactions dominate the annealing effects in the first stage of annealing for certain devices. Furthermore, the results show that oxide trapped charge can influence the effects of bulk silicon displacement damage for particular devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
H.P. Hjalmarson, R.L. Pease, R.M. Van Ginhoven, P.A. Schultz, N.A. Modine,