| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686016 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
Irradiation-induced amorphization in 6H-SiC has been previously studied as a function of irradiation temperature for electrons and ions ranging from Ne to Au. Analysis of these data with a dynamic model for amorphization reveals that the amorphization dose increases and the critical amorphization temperature decreases as the ratio of in-cascade ionization to displacement rates increases. Model fits to the data yield the ratio of radiation-induced recovery cross section, σr, to damage cross section, σd, and an activation energy of 0.12 ± 0.01 eV for irradiation-induced recovery. The critical temperature exhibits a linear dependence on 1/ln(σr/σd), consistent with the model.
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Authors
William J. Weber, Lumin Wang, Yanwen Zhang, Weilin Jiang, In-Tae Bae,