| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686034 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 5 Pages |
In order to understand the properties of ion tracks and the microstructural evolution under accumulation of ion tracks and Xe ions in CeO2, 70–210 MeV Xe10∼14+ ions irradiation examinations and pre-implantations of 240 keV Xe ions have been done at a tandem accelerator facility and an ion implanter facility of JAEA-Tokai. The microstructure observations were performed by means of a transmission electron microscope (TEM) and a scanning electron microscope (SEM) in CRIEPI.Measurements of the diameter of ion tracks with the irradiation temperature, between room temperature and 800 °C, clarify that the prominent changes of ion tracks are hardly observed up to 800 °C. By cross-sectional observation, it becomes clear that the threshold electronic stopping power of ion track formation is around 15–16 keV/nm in case of Xe ions irradiation. 210 MeV Xe14+ ion irradiations cause a surface roughness on CeO2 in the ion fluence range between 5 × 1014 ions/cm2 and 1 × 1015 ions/cm2.
