| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686053 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
P-type ZnO film was obtained by N-implantation at energy of 120 keV with annealing at 850 °C in oxygen. Room temperature Hall effect measurements revealed that the carrier concentration and mobility was 9.95 × 1018 cm−3 and 14.3 cm2/vs, respectively, in the implanted ZnO with optimal fluence of 1015 N/cm2, where more N acceptors were activated as confirmed by X-ray diffraction and photoluminescence. The increase of lattice constants and appearance of emission peaks at 3.26 and 3.18 eV after implantation indicated that the p-type ZnO was realized by substitution of N atom for O sublattice.
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Authors
Kun Wang, Zhibo Ding, Tianxiang Chen, Di Chen, Shude Yao, Zhuxi Fu,