Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1686142 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
Si films with an embedded Ta marker layer are irradiated by Aln (n = 1, 3), Cun (n = 1, 2) and Gen (n = 1, 2), respectively. The profiles of Ta marker with and without irradiation are measured by using Rutherford backscattering (RBS). The more spreading of the profiles of Ta marker induced by the cluster irradiations is observed. The enhanced atomic mixing at the location of Ta marker layer is probably governed by the collective effect of the cluster constituents during the cluster irradiations.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Ping Shi, Fu-Rong Ding, Yao Wang, Rui Nie, Hong-Ji Ma,