| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686300 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 5 Pages |
Abstract
Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
O. Fukuoka, N. Matsunami, M. Tazawa, T. Shimura, M. Sataka, H. Sugai, S. Okayasu,