Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1686402 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
The effect of crystallinity of Ge nanocrystals on the charge storage properties of the metal oxide semiconductor (MOS) structure has been investigated. MOS structure with Ge nanocrystals embedded in the oxide has been fabricated by using atom beam sputtering technique. After annealing at 600 °C in Ar + H2 atmosphere, capacitance-voltage (C-V) measurements show flat band voltage shift of â¼0.9 V. It which is a clear indication of the memory effect of Ge nanocrystals, while unannealed structure doesnot show any hysteresis in the C-V curve. Micro Raman spectroscopy and X-ray diffraction (XRD) analyses show that crystalline content of Ge nanoparticles in the MOS structure has increased after annealing.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Y. Batra, D. Kabiraj, D. Kanjilal,