Characterization of the InN conversion layer in InP surface by ammonia gas: Nuclear reaction analysis, X-ray diffraction and Raman scattering studies

The surface layer of InP(1 0 0) wafer is converted into α-InN phase (wurtzite) by annealing it at around 510 °C for 5 h under NH3 gas flow. X-ray diffraction analysis shows that the conversion layer is a (1 1 −2 0) oriented InN. This result is also supported by E1(TO) and A1(LO) phonon modes observed by a Raman scattering method, originated from the (1 1 −2 0) face of α-InN. The converted layer evaluated by nuclear reaction analysis using a 14N(d, p)15N reaction includes a N concentration of ∼6 × 1022 cm−3.