Article ID Journal Published Year Pages File Type
1686474 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2006 5 Pages PDF
Abstract

We report on heavy-ion-induced modifications of 65–75 nm thick Ni/Si bilayers in the regime of electronic stopping (350 MeV 197Au26+-ions) and nuclear stopping (400 keV Xe+-ions). The samples were analyzed by means of Rutherford back-scattering spectroscopy, X-ray diffraction and magneto-optical Kerr effect. For both types of ions, interface mixing was observed, correlated with full relaxation of the as-deposited stress and uniaxial magnetic anisotropy. For the higher fluences, full intermixing, rebuild-up of stress and loss in magnetic texture occurred. It can be concluded that for both types of ion beam stopping, interface mixing and changes of magnetization occur for similar reasons.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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