| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 1686474 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 5 Pages | 
Abstract
												We report on heavy-ion-induced modifications of 65–75 nm thick Ni/Si bilayers in the regime of electronic stopping (350 MeV 197Au26+-ions) and nuclear stopping (400 keV Xe+-ions). The samples were analyzed by means of Rutherford back-scattering spectroscopy, X-ray diffraction and magneto-optical Kerr effect. For both types of ions, interface mixing was observed, correlated with full relaxation of the as-deposited stress and uniaxial magnetic anisotropy. For the higher fluences, full intermixing, rebuild-up of stress and loss in magnetic texture occurred. It can be concluded that for both types of ion beam stopping, interface mixing and changes of magnetization occur for similar reasons.
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											Authors
												K. Zhang, K.P. Lieb, V. Milinovic, M. Uhrmacher, S. Klaumünzer, 
											