| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686483 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 5 Pages |
Abstract
Model experiments were performed on MOS (metal-oxide semiconductor) capacitors to study ion beam induced charge generation in silicon-on-insulator (SOI) devices. Surprisingly large induced charge was found and a lateral non-uniformity of the induced charge was discovered across the top electrode of the capacitor. In this paper we will give a simple model for the charge induction in MOS structures and an explanation of the lateral changes in the amount of induced charge.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Gyorgy Vizkelethy, David K. Brice, Barney L. Doyle,