A technique to study the lattice location of light elements in silicon by channeling elastic recoil detection analysis

We reported an ion beam analysis technique to detect the lattice location of hydrogen in crystalline silicon by the method of channeling elastic recoil detection analysis. In this technique, the incident beam is introduced along low index channeling axes while the sample is tilted to an angle by which the forward-scattered H atoms can be detected. We have applied this technique to study the lattice location of 1H trapped within a boron-doped Si layer.