Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1686491 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
A Si(0 0 1) wafer with a HfO2 layer of 10 nm thickness prepared by atomic layer CVD, is irradiated by 1 keV Xe+ ions at a grazing angle of 15°. The sample is measured in situ using high-resolution Rutherford backscattering spectroscopy. With removing a part of HfO2 layer by the grazing angle sputtering, the observed trailing edge of Hf signal becomes sharper, indicating an improvement of the depth resolution at the HfO2/Si interface. After removal of a part of the HfO2 layer (∼7 nm), the effective depth resolution becomes more than two times better than that before sputtering and the existence of the SiOx interface layer is clearly seen.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, B. Brijs,