Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1686502 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 5 Pages |
Abstract
The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5-30Â nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25Â nm thick NiSi films and atomic layer deposited 6Â nm thick HfxSiyOz films on silicon using 3-8Â MeV 16O ions as projectiles. In these measurements, a depth resolution of 2Â nm was obtained at the surface, while deeper in the film the resolution was limited by multiple scattering. A full composition with detailed impurity analysis can be obtained by combining time-of-flight forward-scattering spectrometry (TOF-FS) and low energy TOF-ERDA measurements.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
T. Sajavaara, B. Brijs, S. Giangrandi, K. Arstila, A. Vantomme, W. Vandervorst,