| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686508 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(1Â 1Â 1) substrates cleaned in two distinct ways (chemical etching and UHV thermal flashing) revealed changes in the Si peak evolution caused by different growth modes taking place on these two substrates. This has been proved by ex situ AFM measurements as well.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M. KolÃbal, S. Průša, M. Plojhar, P. Bábor, M. PotoÄek, O. Tomanec, P. KostelnÃk, S.N. Markin, P. Bauer, T. Å ikola,