| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686734 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2007 | 5 Pages |
In this work, we present an experimental study of the morphological and chemical evolution of the (1 0 0) GaSb surface after 50 keV focused Ga+ ion beam exposure using scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy and room temperature raman measurements. A honeycomb-like structure consisting of many cells evolved under the GaSb surface implanted with 50 keV Ga+ ions for ion fluences of 2.5 × 1015 ions/cm2. The cell diameter and the thickness of the walls partitioning the cells were about 60 and 20 nm respectively. During further FIB implantation the subsurface cavities expanded in the surface direction and form a microtexture of filaments about 25 nm in diameter. Above a Ga fluence of 6.25 × 1016 ions/cm2 the onset of nanofibers growth was observed taking place in close proximity to the FIB modified surface. The nanofibers are amorphous with remarkably uniform diameters in the range of about 25 nm incorporating GaSb nanocrystallites with cubic zinc blende structure. A growth model is proposed based on the idea of a catalytic vapour liquid solid nanowire growth mechanism.
