| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686805 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 5 Pages |
Abstract
The diluted magnetic semiconductors (DMSs) were achieved by the ion implantation. Fe+ ions (250 keV) were implanted into n-type GaN at room temperature with doses ranging from 8 × 1015 cm−2 to 8 × 1016 cm−2 and subsequently rapidly annealed at 800 °C for 5 m in N2 ambient. PIXE was employed to determine the Fe-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters are detected within the sensitivity of XRD. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The relationships between the Fe-implanted content and the ferromagnetic property are discussed.
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Authors
B. Zhang, L.Q. Shi, C.C. Chen, D.G. Zhao,