| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1686810 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
Raman spectroscopy was employed to study the evolution of host lattice recrystallization in Mn+-implanted GaAs both prior to and following irradiation with Ga, As and H ions. The additional irradiation stimulates the regrowth of the host lattice after a thermal anneal of 920 °C. A competitive process between post-implantation-induced damage and recovery in the crystallization process of amorphous GaAs was observed. At a As+ fluence level exceeding 8 × 1015 cm−2, the self-implantation-enhanced recovery of the crystal dominates the regrowth stage. The vacancy supersaturation produced during additional irradiation is mainly responsible for the enhancement of recrystallization in Mn+-implanted GaAs.
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Authors
Jiqing Wang, Qiang Zhao, Huaizhong Xing, Jianguo Yu, Huibing Mao, Ye Shen,