Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1686913 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 6 Pages |
Abstract
We report on the effects of annealing conditions on the photoluminescence from Si nanocrystal composites fabricated by implantation of Si ions into a SiO2 matrix, followed by thermal treatment in a nitrogen atmosphere. The evolution of the photoluminescence under different annealing temperatures (900-1100 °C) and annealing time (0.5 up to 5 h) were systematically studied for the implanted samples. After annealing the spectra presented two photoluminescence bands: one centered at 610 nm and another around 800 nm. Combined with transmission electron microscopy, we conclude that the photoluminescence behavior of the two bands suggests different origins for their emissions. The 610 nm band has its origin related to matrix defects, while the 800 nm band can be explained by a model involving recombination via quantum confinement effects of excitons in the Si nanocrystals and the interfacial states recombination process confined in the interfacial region between nanocrystals and SiO2 matrix.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
X.D. Zhou, F. Ren, X.H. Xiao, G.X. Cai, C.Z. Jiang,