Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1687262 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2009 | 4 Pages |
Abstract
To investigate the details of the ion beam induced mixing and validate the Auger electron spectroscopy depth profiling technique, sputter-deposited Si 40 nm/Cr 40 nm multilayer samples were irradiated with a 20 keV CF4+ ion beam. Due to the ion bombardment the top Si layer was damaged and a crater was created. Elemental depth profiles and layer thicknesses together with surface topography were measured with Rutherford backscattering spectrometry by applying a focussed 2 MeV He+ beam. The thickness of the top Si layer was also determined from ellipsometry measurements. The results are compared to that of obtained from Auger electron spectroscopy depth profiling.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A. Simon, A. Sulyok, M. Novák, G. Juhász, T. Lohner, M. Fried, A. Barna, R. Huszank, M. Menyhárd,