MeV heavy ion beam induced epitaxial crystallization of buried Si3N4 layer

We report on swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer. High-resolution transmission electron microscopy and selected area diffraction patterns are used to study the 70 MeV Si5+ ion beam induced epitaxial growth of the Si3N4 layer. We observe good epitaxial crystallization at 150 °C, which is a much lower temperature as compared to the conventional solid phase epitaxial growth. A possible mechanism of recrystallization is discussed on the basis of formation of vacancies along the track of the swift heavy ion and their migration at elevated temperatures during irradiation.