Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1687634 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2008 | 4 Pages |
Abstract
Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced radiation damage in silicon. A 140-keV H+ ion beam was incident along 〈1 0 0〉 Si axis at room temperature to a fluence ranging from 1.6 × 1016 cm−2 to 7.0 × 1016 cm−2. The evolution of the aligned yields versus fluences has been examined and found to agree well with a model proposed by us.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Gwenaëlle Gachon, Michael Martin, Jesse Carter, Mark Hollander, Lin Shao,