Antisite defects in a chemical compound crystal caused by ion irradiation

We have studied the ion-induced defects in a chemical compound semiconductor (3C-SiC) using an empirical molecular dynamics calculation. The produced defects were analysed by the Pixel mapping method, focusing on antisite defects (replacement). For amorphization, interstitial atoms are more important than antisites. Unless ion dose is high, with increasing temperature and impact energy, antisites appeared in large numbers. This result is consistent with an experimental and theoretical model for the photoluminescence center DI that survives even after 2000 K annealing and is supposed to be an antisite pair. Moreover, specific (3 1 1) antisite planes and (3 1 1) interstitial ones could be produced, as if the (3 1 1)Si and (3 1 1)C double layer shifted up/down.