| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1687918 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
The poly-SiGe samples presented Rs values one order of magnitude lower than poly-Si and CV analysis of nMOS capacitors showed very good characteristics. The 1% Ge in the alloy ensures a low thermal budget for the overall process. Although a relatively high annealing temperature (800 °C) must be used to reduce oxide charge and interface traps, the temperature is well below the necessary for poly-Si processing and can allow formation of the shallow junctions needed for next technological nodes.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Ricardo Cotrin Teixeira, Ioshiaki Doi, José Alexandre Diniz, Jacobus Willibrordus Swart, Maria Beny Pinto Zakia,