Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1687923 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 4 Pages |
Abstract
In the quest of new p-type dopants for Si, indium represents a promising candidate for its low diffusivity even if it presents a very low solubility and a very deep acceptor state. It has been recently shown that by co-doping In implanted Si with C, a shallower state forms related to In–C complexes. In this contribution we investigate the effect of C co-implantation on the In local configuration for In concentration higher than the solid solubility limit in Si. We find evidence that C has the property of preventing the formation of In clusters by binding In also at high concentrations. This interaction has a clear effect on the dopant concentration profile and on electrical properties of the material.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
F. d’Acapito, Y. Shimizu, S. Scalese, M. Italia, P. Alippi, S. Grasso,