Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1687926 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 5 Pages |
Abstract
We present a study of the transformation of extended defects during annealing at 800 °C (from 15 to 2700 s) of preamorphised silicon (30 keV, 1 × 1015 Ge+/cm2). After the early stages, during which the {1 1 3}-rod-like (RL) defects represent the majority defect type, the {1 1 1}-RLs and the dislocation loops (DLs) grow in size and density. After 300 s, the majority of the excess interstitial atoms are bound by the {1 1 1}-RLs. Eventually, after 2700 s all the available Si atoms are stored in the DLs. These results suggest that the {1 1 1}-RL defects are more energetically stable than {1 1 3}s and less stable than DLs.
Related Topics
Physical Sciences and Engineering
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Authors
S. Boninelli, N. Cherkashin, A. Claverie, F. Cristiano,