The effect of arsenic fluence on the boron diffusion in the polysilicon on monosilicon during rapid thermal annealing

In this work we study the dopant redistribution of arsenic and boron during rapid thermal annealing (RTA) from implantation-doped polycrystalline silicon films into underlying single crystalline silicon. Arsenic (2 × 1015 or 5 × 1015 atoms/cm2; 100 keV) and boron (1016 atoms/cm2; 25 keV) codiffusion are studied in an emitter and extrinsic base of bipolar transistor in PNP configuration. The purpose of this study has been carried out to test the effect of arsenic fluence on the boron redistribution for annealing 1000–1150 °C and of 1–20 s duration. The increase arsenic fluence products a delay boron diffusion which becomes more significant at 1150 °C. At this temperature, the stopping is estimated at 500 Å.