| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1687962 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 5 Pages |
Abstract
The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature (∼80 °C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Han-Ki Kim,