P2 dimer implantation in silicon: A molecular dynamics study

Using molecular dynamics simulations we investigate the influence of lattice-mediated vicinage effects in molecular P2 implantation events into silicon with energies in the low-keV range. We find that lattice-mediated vicinage effects are insignificant and hence that the dimer implantation can be closely approximated by two single-ion implantations a short distance apart. The simulations are applied to the technological problem of creating devices consisting of closely-spaced donors for the investigation of inter-donor coupling effects.