Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

Article ID	Journal	Published Year	Pages	File Type
1687992	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms	2006	6 Pages	PDF

Abstract

The gettering of oxygen in this sublayer during annealing is supposed to be caused by amorphous-like imperfections survived after relaxation of dense cascades produced by Si primary recoils received the energy higher than “threshold” energy 5Â keV.

Keywords

82.80.Ms 61.72.Ff 61.72.Yx 61.72.Tt 61.72.Ss 68.37.Lp Oxygen Heavy doping silicon Lattice defects Ion implantation Gettering

Related Topics

Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films

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Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

Authors

V.I. Obodnikov, E.G. Tishkovsky, A.G. Cherkov, L.I. Fedina,