| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1688059 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 6 Pages |
Abstract
The variation of the surface chemical composition of nanostructures fabricated by local anodic oxidation (LAO) on epitaxial GaAs/AlAs/GaAs layered structures is investigated by means of laterally-resolved photoemission spectroscopy. Our analysis evidences the unexpected presence of Al compounds located in the topmost layers of the LAO oxide structures. We studied the evolution of the surface chemical composition of such nanostructures as a function of X-ray exposure time (photon energy hν = 130 eV) and we found a reduction in the amount of the surface Ga oxide compounds with respect to the Al compounds.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
G. Mori, M. Lazzarino, D. Ercolani, G. Biasiol, A. Locatelli, L. Sorba, S. Heun,