Relaxed state of GexSi1−x islands embedded in Si

The process of capping Ge islands with Si overlayers is known to have a strong influence on their composition and shape. In this work we have investigated Ge islands on Si produced by chemical vapor deposition covered with Si layers of different thickness. The structural characterization was carried out by X-ray absorption spectroscopy at the Ge-K edge. A noticeable Si uptake by the islands is evident upon capping. Bond length for the first three shells have been analyzed by comparison with models based on the valence force field method. The results evidence that the islands have, on the average, a relaxed state with presumably strained parts in contact with the Si matrix.