Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1688066 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2006 | 6 Pages |
Abstract
The surface segregation of Si used for doping of GaN films grown by metal-organic vapor phase epitaxy has been detected by spectro-microscopy. Facetted cracks with a threefold symmetry have been observed which extend over several micrometers. From local spectra, an enhanced Si segregation is deduced at the facets as compared to the flat surface. A scheme is presented which allows to extract quantitative information about the local surface concentrations for such facetted surface systems. Following to this scheme, Si coverages as high as approximately 4.5 × 1014 Si atoms/cm2 occur at the facets which clearly proves the segregation tendency of Si.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, J. Falta,