Texture change of TiN films due to anisotropic incorporation of oxygen

Results of comprehensive structural and microchemical analyses revealed the mechanisms responsible for changing the <111> to <001> competitive growth texture of TiN films when the level of oxygen doping was 20 at.%. It has been shown that the growth competition is related to the different way of segregation-incorporation of the oxygen species on the {001} and {111} crystal faces. Oxygen is preferentially segregated on the {111} crystal face and is growing in the form of a 2D TiO2 surface layer on the growth surface, limiting the growth of <111> oriented crystals. On the {001} faces, however, the major part of condensing oxygen species is dissolved into the crystal lattice and only a part forms TiO2 aggregates. These aggregates have a 3D morphology which do not hinder the growth of <001> oriented crystals. Consequently, the <001> oriented crystals win the growth competition leading to a film structure constituted of V-shaped columns.