Article ID Journal Published Year Pages File Type
1688387 Vacuum 2015 4 Pages PDF
Abstract

•Ti buffer layer was employed to release residual stress of TiN/TiCN films.•Surface chemical composition of films was measured.•Phase structure and residual stress of TiN/TiCN multilayer were determined and analyzed.•Surface topography and cross-section morphology were exhibited by SEM.•Optimal reaction gas ratio obtained for reduce residual stress.

TiN/TiCN films were prepared on AZ31 by physical vapor deposition. Structural features and residual stress were determined by X-ray fluorescence (XRF), scanning electron microscopy (SEM) and based on the grazing incidence X-ray diffraction (GIXRD), respectively. Results show that films have (111) preferred orientation. With a increasing of the reaction gas ratio, the C + N and Ti content increases first then decreases, and reach at the maximum value when the gas ratio is 15/5/3. Film have uniform thickness, and the hole shape defects appears in partial film and non-uniformly distribute on the surface of the film. The residual stress was tensile stress, and the residual tensile stress value decreased with the increase of the reaction gas ratio.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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