| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1688392 | Vacuum | 2015 | 4 Pages |
•CeO2/Dy2O3 multilayer films were deposited on Si by electron-beam evaporation.•White light emission was obtained from the annealed CeO2/Dy2O3 multilayer film.•The coordinate data of optimal sample are proximate to ideal white light emission.•The effects of Dy3+ concentration on photoluminescence properties were studied.•The effects of annealing temperature on luminescence intensity were studied.
CeO2/Dy2O3 multilayer films were deposited on Si substrates using electron-beam evaporation, and Dy3+ ions were doped in CeO2 after samples were annealed in weak reducing atmosphere at high temperature. White light emissions were observed from CeO2:Dy3+ films. The luminescence properties of CeO2:Dy3+ films were investigated by excitation, emission spectra and decay curves. In addition, the effects of Dy3+ concentration and annealing temperature on photoluminescence intensity were conducted. In this paper, the color coordinates of samples with different Dy3+ concentration were calculated and the results were presented in chromaticity diagram.
