Magnetoresistance effect in a graphene modulated by magnetic-electrical barriers

We theoretically investigate the magnetoresistance (MR) effect in a monolayer graphene modulated by both magnetic and electrical barriers, which can be experimentally realized by depositing two parallel metallic ferromagnetic tripes under an applied voltage on the top and bottom of a graphene. The tremendous MR can be found due to the significant difference between the transmissions through the parallel and antiparallel magnetization configurations, and the MR ratio strongly depends on the strength of the magnetic field and the height of the electric barrier. Therefore, we can control the MR effect by changing either of the two magnetic fields or the electric barrier to make a MR device based on a graphene.