Characterization of gallium–nitrogen co-doped zinc oxide thin films prepared by RF diode sputtering

We investigated the possibility of achieving p-type zinc oxide (ZnO) by RF diode sputtering and gallium–nitrogen co-doping. ZnO:Ga:N thin films were prepared with a different N2 content in Ar/N2 working gas, ranging from 0 to 100%, and at a varying substrate temperature, from room temperature (RT) to 300 °C. A hole conduction with maximum carrier concentration of 2.6 × 1018 cm−3, mobility of 2 cm2/Vs and resistivity of 1.5 Ω cm resulted from deposition at RT with 100% N2. It arose from N incorporation and formation of NO acceptors. In the secondary ion mass spectrometry (SIMS) depth profiles of the co-doped films were observed NO/NO2 negative ions. Average transmittance (including Corning glass substrate) across the visible spectrum varied (60 ÷ 66%) with increasing nitrogen content (50 ÷ 100% N2). As the substrate temperature increased (RT – 300 °C), highly transparent (T ∼72–83%) and conductive (electron concentrations of 1017–1019 cm−3) n-type ZnO:Ga:N films were attained. Reduction of optical band gap (Eg) (∼3.13–3.08 eV) was observed for co-doped ZnO films. Atomic force microscopy (AFM) images revealed that the films grown at RT have roughness of approximately 5.3 nm while roughness of those grown at 300 °C is approximately 3.9 nm.

► Properties of sputtered ZnO:Ga:N films as a function of N2 and growth temperature. ► Sputtering in 100 % N2 at room temperature resulted in p-type ZnO:Ga:N. ► ZnO:Ga:N n-type was obtained at substrate temperatures 200 °C and 300 °C. ► N-doping resulted in reduction of the optical band gap, and increased absorption.